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Kingston 8GB DDR3-1333MHZ SODIMM

Kingston 8GB DDR3-1333MHZ SODIMM
  • 23519
$110.0
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Specifications

  • Product Name:
    Kingston 8GB DDR3-1333MHZ SODIMM
  • Model Number:
    KVR1333D3S9/8G
  • Brand:
  • Manufacturer Warranty:
    1 Year
  • Description



    PRODUCT OVERVIEW



    This guaranteed compatible memory module from Kingston is un-buffered and does not use ECC. The modules which are manufactured in Taiwan are built to the highest standards this helps to limit unexpected system crashes and eliminates the memory from causing data corruption. This chip is designed for compatibility with all devices that use standard 204 pin So-Dimm memory modules and are DDR 1333 MHz compatible.

    Kingston is a leader in computer and notebook system memory and upgrade kits. Its high quality and reliable products are used throughout the world. These premium 8 GB Pc3-10600 upgrade modules for notebooks and small form factor devices are mounted on the space saving and easy to install 204 pin SO-Dimm configuration. This allows a single upgrade to increase your memory capacity by 8 GB. This module uses the high speed DDR3 1333MHz memory architecture and is fully compliant to the system memory bus standard.



    SPECIFICATIONS


                                                                                                                                                                                                                                SYSTEM REQUIREMENTSCompatability List204 pin So-Dimm socket1.5 VDDR3-1333MhzWARRANTY INFORMATIONWarranty1-year limited warrantyPACKAGE CONTENTSContents1 x SO-Dimm chip 204 pin 8GBWeight0.13 KgTECHNICALLatencyCL 9-9-9Internal Memory8192 MBInternal memory typeDDR3Memory clock speed1333 MHzMemory layout1 x 8192 MBMemory form factor204-pin SO-DIMMMemory bus64 bitLead platingGoldModule configuration1024M X 64Memory typePC3-10600Bus clock rate1333 MHzFEATURESProduct FeaturesJEDEC standard 1.5V (1.425V ~1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential withstarting address “000” only), 4 with tCCD = 4 which does notallow seamless read or write [either on the fly using A12 orMRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQpin (RZQ : 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C,3.9us at 85°C < TCASE < 95°C Asynchronous Reset PCB: Height 1.18” (30mm), double sided component

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