Home  > PC Parts  > Computer Parts  > Memory (RAM)  > DDR3 RAM > Kingston KVR16LN11/4 4GB 1600MHz DDR3L CL11 1.35V

Kingston KVR16LN11/4 4GB 1600MHz DDR3L CL11 1.35V

Kingston KVR16LN11/4 4GB 1600MHz DDR3L CL11 1.35V
  • 28627
or 4x fortnightly payments of $330 with ZipPay
Learn more
- +
Want to be notified when this item is available for order?

Please enter a valid email address

By clicking Let me know, you agree to our Terms & Conditions and to receive email updates and exclusive promotions, which you may unsubscribe from any time.

WishAdd to Wishlist

Buy Now, Pay Later:  
Buy now with PayPal  
   Click & Collect   Question Mark

Your store is set to:

Loading... Contact Store

   Same Day Dispatch   Question Mark

Order within 1hrs and 49mins

Question Mark

Bell  Stock Levels May Vary

Make sure to have the correct store selected. Stock levels are different at every store!
We don't do walk-ins, please make sure to order online for Pickup.


  • Product Name:
    Kingston KVR16LN11/4 4GB 1600MHz DDR3L CL11 1.35V
  • Model Number:
  • Brand:
  • Manufacturer Warranty:
    1 Year



This document describes ValueRAM's 512M x 64-bit (4GB)        DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low        voltage, memory module, based on eight 512M x 8-bit FBGA        components. The SPD is programmed to JEDEC standard        latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This        240-pin DIMM uses gold contact fingers. The electrical and        mechanical specifications are as follows:



  • JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~        1.575V) Power Supply

  • VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

  • 800MHz fCK for 1600Mb/sec/pin

  • 8 independent internal bank

  • Programmable CAS Latency: 11, 10, 9, 8, 7, 6

  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

  • 8-bit pre-fetch

  • Burst Length: 8 (Interleave without any limit, sequential with        starting address 000 only), 4 with tCCD = 4 which does not        allow seamless read or write [either on the fly using A12 or        MRS]

  • Bi-directional Differential Data Strobe

  • Internal(self) calibration : Internal self calibration through ZQ        pin (RZQ : 240 ohm ± 1%)

  • On Die Termination using ODT pin

  • Average Refresh Period 7.8us at lower than TCASE 85°C,        3.9us at 85°C < TCASE < 95°C

  • Asynchronous Reset

  • PCB Height:        0.740 (18.75mm) or 1.180 (30.00mm), single sided        component

CL(IDD)11 cycles
Row Cycle Time (tRCmin)49.125ns (min.
Refresh to Active/Refresh
   Command Time (tRFCmin)
260ns (min.)
Row Active Time (tRASmin)36ns (min.)
Maximum Operating Power(1.35V) = 2.160 W*
UL Rating94 V - 0
Operating Temperature0o C to 85o C
Storage Temperature-55o C to +100o C
Note*Power will vary depending on the SDRAM used.

* Specifications are subject to change without notice.
* Specifications may vary.
* The product picture(s) is only for your reference, it may differ from the actual product.


Similar Products